collector-emitter voltage vce 600 v dc collector current tc=80c tc=25c i c , nom ic 50 75 a repetitive peak collector cur- rent tp=1msec,tc=80c i crm 100 a total powerdissipation tc=25c p tot 280 w gate-emitter peak voltage v ges +/-20 v dc forward diode current i f 50 a repetitive peak forward current tp=1msec i frm 100 a i 2 t value per diode vr=0v, tp=10msec, tvj=125c i 2 t 450 a 2 sec isolation test voltage rms, 50hz, t=1min v isol 2500 v attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -aln isolation maximum rated values/ electrical properties SML50HB06 collector-emitter saturation voltage ic=50a,vge=15v, tc=25c ic=50a,vge=15v,tc=125c v ce(sat) 1.95 2.2 2.45 v gate threshold voltage ic=50a,vce=vge, tvj=25c vge (th) 4.5 5.5 6.5 v input capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c ies 2.2 nf reverse transfer capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c res 0.2 nf collector emitter cut off current vce=600v,vge=0v,tvj=25c vce=600v,vge=0v,tvj=125c i ces 1 1 500 a gate emitter cut off current vce=0v,vge=20v,tvj=25c i ges 400 a
turn on delay time ic=50a, vcc=300v vge=+/15v,rg=2.7 ? ,tvj=25c vge=+/-15v,rg=2.7 ? ,tvj=125c t d,on 40 42 nsec nsec rise time ic=50a, vcc=300v vge=+/-15v,rg=2.7 ? ,tvj=25c vge=+/-15v,rg=2.7 ? ,tvj=125c tr 9 10 nsec nsec turn off delay time ic=50a, vcc=300v vge=+/-15v,rg=2.7 ? ,tvj=25c vge=+/-15v,rg=2.7 ? ,tvj=125c t d , off 120 130 nsec nsec fall time ic=50a, vcc=300v vge=+/-15v,rg=2.7 ? ,tvj=25c vge=+/-15v,rg=2.7 ? ,tvj=125c t f 12 21 nsec nsec turn energy loss per pulse ic=50a,vce=300v,vge=15v rge=2.7 ? ,tvj=125c,l=35nh e on 0.5 mj turn off energy loss per pulse ic=50a,vce=300v, vge=15v rge= ? ,tvj=125c,l=35nh e off 1.0 mj sc data tp 10sec, vge 15v tvj 125c,vcc=300v,vce(max)- vces-l di/dt i sc 225 a stray module inductance l ce 40 nh terminal-chip resistance r c 1.2 m ? forward voltage ic=50a,vge=0v, tc=25c ic=50a,vge=0v, tc=125c v f 1.25 1.2 1.6 v peak reverse recovery current if=50a, -di/dt=2900a/sec vce=300v,vge=-10v,tvj=25c vce=300v,vge=-10v,tvj=125c i rm 88 92 a recovered charge if=50a, -di/dt=2900a/sec vce=600v,vge=-10v,tvj=25c vce=600v,vge=-10v,tvj=125c qr 3.4 5.6 c reverse recovery energy if=50a, -di/dt=2900a/sec vce=600v,vge=-10v,tvj=25c vce=600v,vge=-10v,tvj=125c e rec 1.5 mj mj diode characteristics
thermal resistance junction to case igbt diode r j-c 0.67 1.1 k/w thermal resistance case to heatsink r c-hs 0.03 k/w maximum junction temperature tvj 150 c maximum operating temperature top -55 125 c storage temperature tstg -55 125 c thermal properties min typ max
circuit diagram
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